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參數(shù)資料
| 型號(hào)： | 2SK1625(S) |
| 元件分類： | JFETs |
| 英文描述： | 1.3 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SK1625(S) |
2SK1625(L), 2SK1625(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
0.9
1.3
I
D = 4 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
4.0
6.5
—
S
I
D = 4 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1180
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
265
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
50
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
—
50
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
105
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
370
—
ns
I
F = 7 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
See characteristic curves of 2SK1403.
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