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參數(shù)資料
| 型號： | 2SK1627-E |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 176K |
| 代理商： | 2SK1627-E |
2SK1626, 2SK1627
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1626
450
Drain to source voltage
2SK1627
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
Drain peak current
ID(pulse)*
1
20
A
Body to drain diode reverse drain current
IDR
5
A
Channel dissipation
Pch*
2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1626
450
Drain to source
breakdown voltage
2SK1627
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1626
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1627
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1626
RDS(on)
—
1.0
1.4
Static drain to source on
state resistance
2SK1627
—
1.2
1.5
ID = 2.5 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
2.5
4.0
—
S
ID = 2.5 A, VDS = 10 V *
3
Input capacitance
Ciss
—
640
—
pF
Output capacitance
Coss
—
160
—
pF
Reverse transfer capacitance
Crss
—
20
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
Rise time
tr
—
25
—
ns
Turn-off delay time
td(off)
—
50
—
ns
Fall time
tf
—
30
—
ns
ID = 2.5 A, VGS = 10 V,
RL = 12
Body to drain diode forward voltage
VDF
—
0.95
—
V
IF = 5 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
300
—
ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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| 2SK1637(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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