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參數資料
| 型號： | 2SK1629 |
| 元件分類： | JFETs |
| 英文描述： | 0.27 ohm, POWER, FET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 32K |
| 代理商： | 2SK1629 |
2SK1628, 2SK1629
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1628 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1629
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1628 I
DSS
—
250
AV
DS = 360 V, VGS = 0
drain current
2SK1629
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1628 R
DS(on)
—
0.20
0.25
I
D = 15 A, VGS = 10 V *
1
on state resistance
2SK1629
—
0.22
0.27
Forward transfer admittance
|yfs|
12
20
—
S
I
D = 15 A, VDS = 10 V *
1
Input capacitance
Ciss
—
2800
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
780
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
90
—
pF
Turn-on delay time
t
d(on)
—
32
—
ns
I
D = 15 A, VGS = 10 V,
Rise time
t
r
—
140
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
200
—
ns
Fall time
t
f
—
100
—
ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 30 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
600
—
ns
I
F = 30 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
See characteristics curves of 2SK1169, 2SK1170
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| 2SK1636(S) | 0.27 ohm, POWER, FET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK163 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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| 2SK1637(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1642 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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