參數(shù)資料
型號： 2SK1665
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-247VAR
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 45A條（?。﹟對247VAR
文件頁數(shù)： 3/8頁
文件大?。?/td> 39K
代理商： 2SK1665
2SK1620(L), 2SK1620(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 120 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
4.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
0.12
0.15
I
D = 5 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
4.0
7.0
—
S
I
D = 5 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1200
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
550
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = 5 A, VGS = 10 V,
Rise time
t
r
—
50
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—70
—
ns
Fall time
t
f
—40
—
ns
Body to drain diode forward
voltage
V
DF
—
1.2
—
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
220
—
ns
I
F = 10 A, VGS = 0,
di
F/dt = 50 A/s
Note
1. Pulse test
See characteristic curves of 2SK740.
相關(guān)PDF資料
PDF描述
2SK1672 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1681 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 30A I(D) | TO-247VAR
2SK1683 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1684 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-220VAR
2SK1686 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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