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參數(shù)資料
| 型號： | 2SK1772 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 55K |
| 代理商： | 2SK1772 |
2SK1772
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
50
A
V
DS = 25 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.4
0.6
I
D = 0.5 A
V
GS = 10 V*
1
—
0.6
0.85
I
D = 0.5 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
0.6
1.0
—
S
I
D = 0.5 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
85
—
pF
V
DS = 10 V
Output capacitance
Coss
—
65
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
—
ns
I
D = 0.5 A
Rise time
t
r
—
15
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
40
—
ns
R
L = 60
Fall time
t
f
—30—ns
Body to drain diode forward
voltage
V
DF
—
1.2
—
V
I
F = 1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
30
—
ns
I
F = 1 A, VGS = 0,
di
F/dt = 50 A/s
Note
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1772-HY(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1773-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK1775-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 8A TO-3P |
| 2SK177T1 | 制造商:NEC 功能描述:New |
| 2SK1807-E | 制造商:Renesas Electronics Corporation 功能描述:900V NCHANEL MOSFET |
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