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參數(shù)資料
| 型號： | 2SK1772HYTR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SK1772HYTR-E |
2SK1772
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Ta = 25
°C
PW
=
1
ms
DC
Opera
tion
PW
=
10
ms
Operation in this area is
limited by RDS(on)
PW = 100
s
Maximum Safe Operation Area
2.0
1.6
1.2
0.8
0.4
01
2
3
4
5
Drain to Source Voltage
VDS
(V)
Drain
Current
I
D
(A)
Drain
Current
I
D
(A)
Pulse test
V
= 2 V
GS
2.5 V
3.0 V
3.5 V
4 V
10 V
5 V
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
01
2
3
4
5
Gate to Source Voltage
VGS
(V)
–25
°C
VDS = 10 V
Pulse test
Tc = 25
°C
75
°C
Typical Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
02
4
6
8
10
Gate to Source Voltage
VGS
(V)
Pulse test
I = 0.5 A
D
1 A
2 A
Drain
to
Source
Saturation
Voltage
V
DS(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
5
2
1
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Pulse test
V
= 4 V
GS
10 V
Drain Current
ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
1.6
1.2
0.8
0.4
0
Channel
Power
Dissipation
Pch**
(W)
(**
on
the
almina
ceramic
board)
50
100
150
200
Ambient Temperature
Ta (
°C)
Maximum Channel Power
Dissipation Curve
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