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參數(shù)資料
| 型號(hào)： | 2SK1837-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK1837-E |
2SK1837
REJ03G0979-0300 Rev.3.00 May 13, 2009
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.085
0.11
ID = 25 A, VGS= 10 V*
3
Forward transfer admittance
|yfs|
22
35
—
S
ID = 25 A, VDS = 10 V*
3
Input capacitance
Ciss
—
8150
—
pF
Output capacitance
Coss
—
2100
—
pF
Reverse transfer capacitance
Crss
—
180
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
80
—
ns
Rise time
tr
—
250
—
ns
Turn-off delay time
td(off)
—
550
—
ns
Fall time
tf
—
220
—
ns
ID = 25 A, VGS = 10 V,
RL = 1.2
Body to drain diode forward voltage
VDF
—
1.1
—
V
IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
620
—
ns
IF = 50 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse Test
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