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參數(shù)資料
| 型號： | 2SK1837-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 117K |
| 代理商： | 2SK1837-E |
2SK1837
REJ03G0979-0300 Rev.3.00 May 13, 2009
Page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
400
300
200
100
0
50
100
150
200
1
3
10
30
100
300
1000
0.1
0.3
1
3
10
30
100
PW
=
10
ms
(1
shot)
10
s
Operation in this area
is limited by R
DS(on)
1 ms
Ta = 25
°C
300
1000
DC
Operation
(Tc
=
25
°C)
100
ms
04
8
12
16
20
40
60
80
100
8 V
10 V
6 V
5.5 V
5 V
4.5 V
Pulse Test
VGS = 4 V
02
4
6
8
10
20
40
60
80
100
Tc = 75
°C
25
°C
– 25
°C
VDS = 20 V
Pulse Test
04
8
12
16
20
1
3
2
4
5
50 A
20 A
ID = 10 A
5
10
20
50
100
200
500
0.01
0.02
0.05
0.1
0.2
0.5
1
VGS = 10, 15 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1838STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SK1839-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 30V 0.1A SOT323 |
| 2SK184-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin Mini |
| 2SK184-GRTPE4 | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE AUDIO AMPLIFIER - Tape and Reel |
| 2SK184-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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