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參數(shù)資料
| 型號(hào)： | 2SK1838(L) |
| 元件分類： | JFETs |
| 英文描述： | 8 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK1838(L) |
2SK1838(L), 2SK1838(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
250
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
1A
Drain peak current
I
D(pulse)*
1
2A
Body to drain diode reverse drain current
I
DR
1A
Channel dissipation
Pch*
2
10
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
DS = 10 V, ID = 1 mA
Forward transfer admittance
|y
fs|
0.3
0.5
—
S
V
DS = 10 V, ID = 0.5 A *
1
Static drain to source on state
resistance
R
DS(on)
—
5.5
8.0
I
D = 0.5 A, VGS = 10 V *
1
Input capacitance
Ciss
—
60
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
30
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t
d(on)
—5
—ns
V
GS = 10 V, ID = 0.5 A,
Rise time
t
r
—6
—ns
R
L = 60
Turn-off delay time
t
d(off)
—10
—
ns
Fall time
t
f
—
4.5
—
ns
Body to drain diode forward
voltage
V
DF
—
0.96
—
V
I
F = 1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
160
—
ns
I
F = 7 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
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