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參數(shù)資料
| 型號(hào)： | 2SK1842O |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 70K |
| 代理商： | 2SK1842O |
259
Silicon Junction FETs (Small Signal)
unit: mm
2SK1842
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
I Features
G Low gate to source leakage current, I
GSS
G Small capacitance of C
iss, Coss, Crss
G Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
VGDO
VGSO
ID
IG
PD
Tj
Tstg
Ratings
40
1
10
150
55 to +150
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
IDSS*
IGSS
VGDS
VGSC
| Yfs |
Ciss
Coss
Crss
Conditions
VDS = 10V, VGS = 0
VGS =
20V, V
DS = 0
IG =
10A, V
DS = 0
VDS = 10V, ID = 1A
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
min
30
40
0.05
max
200
0.5
3
Unit
A
nA
V
mS
pF
* I
DSS rank classification
typ
1.3
1
0.4
Runk
IDSS (mA)
Marking Symbol
O
30 to 75
EBP
P
50 to 100
EBQ
Q
70 to 130
EBR
R
100 to 200
EBS
1: Source
JEDEC: TO-236
2: Drain
EIAJ: SC-59
3: Gate
Mini3-G1 Package
Marking Symbol (Example): EB
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –
0.05
2.8
+0.2 –
0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5°
10
°
0
to
0.1
1.1
+0.2 –
0.1
1.1
+0.3 –
0.1
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