參數(shù)資料
型號(hào): 2SK1859
元件分類: JFETs
英文描述: 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PFM, 3 PIN
文件頁(yè)數(shù): 6/9頁(yè)
文件大小: 49K
代理商: 2SK1859
2SK1859
4
90
0
100
50
150
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature Tc (°C)
60
30
50
1
0.3
0.05
100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
30
10
1000
DC
Operation
(Tc
=
25°C)
PW
=
10
ms
(1
Shot)
3
0.1
1
Ta = 25°C
10
s
100
s
1 ms
3
30
300
Operation
in
this
area
is
limited
by
R
(on)
DS
PW
T
P
DM
θch – c(t) = s(t) ch – c
ch – c = 2.08°C/W, Tc = 25°C
θ
γθ
.
PW
D =
T
Normalized
Transient
Thermal
Impedance
s
(t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
0.01
0.03
0.1
0.3
1
3
10
100
1 m
10 m
100 m
1
10
1 Shot
Pulse
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Width PW (S)
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