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參數(shù)資料
| 型號： | 2SK1862-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 450 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 944K |
| 代理商： | 2SK1862-E |
2SK1862, 2SK1863
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
5
4
3
2
0
4
8
12
16
20
Pulse Test
1
Drain
Current
I
D
(A)
VGS = 4 V
6 V
Drain to Source Voltage VDS (V)
4.5 V
10 V
5.5 V
8 V
5 V
Typical Transfer Characteristics
4
3
2
1
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
5
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25
°C
TC = 25°C
75
°C
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
ID = 1 A
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
3 A
50
20
10
5
0.5
0.2
0.5
1.0
2
10
Drain Current ID (A)
0.1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
VGS = 10 V
5
2
1.0
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
30
0
100
50
150
20
10
30
1
0.3
0.03
10
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
Shot)
3
0.1
Ta = 25
°C
10
s
100
s
1 ms
1
3
10
30
100
300
1000
Operation
in
this
area
is
limited
by
R
(on)
DS
2SK1862
2SK1863
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