參數(shù)資料
型號(hào)： 2SK1869L
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場效應(yīng)晶體管
文件頁數(shù)： 3/5頁
文件大?。?/td> 28K
代理商： 2SK1869L
2SK1869(L), 2SK1869(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
350
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
=280 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V*
1
I
D
= 4 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source on state
resistance
—
0.6
0.8
Forward transfer admittance
|y
fs
|
3.0
5.0
—
S
Input capacitance
Ciss
—
635
—
pF
Output capacitance
Coss
—
230
—
pF
Reverse transfer capacitance
Crss
—
40
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= 4 A
V
GS
= 10 V
R
L
= 7.5
Rise time
—
50
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
40
—
ns
Body to drain diode forward
voltage
—
0.95
—
V
I
F
= 7 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
240
—
ns
I
F
= 7 A, V
= 0,
di
F
/ dt = 100 A /
μ
s
See characteristic curves of 2SK1400A
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PDF描述
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