參數(shù)資料
型號(hào)： 2SK1960
元件分類： JFETs
英文描述： 3 A, 16 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PACKAGE-3
文件頁數(shù)： 5/7頁
文件大?。?/td> 170K
代理商： 2SK1960
2SK1960
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Derating
Factor
-
%
0
100
80
60
40
20
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
1
10
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID
-
Drain
Current
-
A
0
2.5
2.0
1.5
1.0
0.5
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
0
10
1
0.1
0.01
0.001
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
0.01
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0.01
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID - Drain Current - A
30
60
90
120
150
5
2
1
0.5
0.2
0.1
2
5
10
50
20
Single
pulse
PW
=
100
ms
DC
10
ms
1 ms
0.2
0.4
0.6
0.8
1.0
4.0
V
3.0
V
2.5
V
2.0
V
1.8 V
VGS = 1.5 V
1234
VDS = 3 V
TA = 75 C
25 C
–25 C
3
1
0.3
0.1
VDS = 3 V
0.03
0.1
0.3
1
3
25 C
75 C
TA = –25 C
0.1
1
10
TA = 75 C
25 C
–25 C
VGS = 1.5 V
TA = 75 C
25 C
–25 C
VGS = 2.5 V
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1960-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
2SK1960T1AZ 制造商:Renesas Electronics 功能描述:Cut Tape
2SK1960-T1-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R
2SK198 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1981-01SC 制造商:Fuji Electric 功能描述:
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