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參數(shù)資料
| 型號(hào)： | 2SK2007-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK2007-E |
2SK2007
Rev.2.00 Sep 07, 2005 page 5 of 6
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Time Test Circuit
Waveforms
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
50
40
30
20
10
0.4
0.8
1.2
1.6
2.0
Pulse Test
VGS = 0, –5 V
10 V
0
3
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pul
se
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 1.25°C/W, T
C = 25°C
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
VDD
30 V
=
.
RL
Vin
Vout
td (on)
10%
t r
t f
10%
90%
10%
90%
td (off)
90%
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| 2SK1439-RA | 3 A, 450 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2011-RB | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2008 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2008-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2009 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| 2SK2009(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini Bulk |
| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
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