- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30608 > 2SK2013 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2013 |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 233K |
| 代理商： | 2SK2013 |
2SK2013
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
Audio Frequency Power Amplifier Application
High breakdown voltage
: VDSS = 180V
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Complementary to 2SJ313
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
1
A
Drain power dissipation (Tc = 25°C)
PD
25
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
—
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
—
V
Gatesource cutoff voltage (Note 2)
VGS (OFF)
VDS = 10 V, ID = 10 mA
1.8
—
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
—
1.7
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
—
0.7
—
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
—
170
—
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
—
45
—
Reverse transfer capacitance
Crss
VDD ≈ 10 V, VGS = 0, f = 1 MHz
—
17
—
pF
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2013
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2013-O | 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2035TE85L | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2035TE85R | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2040-Z | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2040-Z-E1 | Si, SMALL SIGNAL, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2013_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
| 2SK2013_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SK2013O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
| 2SK2013Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
| 2SK2013-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。