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參數(shù)資料
| 型號： | 2SK2055 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 2SK2055 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2055
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
2.0 ±0.2
5.7 ±0.1
3.65
±0.1
1.0 0.5 ±0.1
0.55
2.1
4.2
0.5 ±0.1
0.85
±0.1
SD
G
5.4
±0.25
1.5 ±0.1
0.4 ±0.05
Marking: NA3
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
The 2SK2055 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
RDS(on) = 0.45
MAX. @VGS = 4 V, ID = 1.0 A
RDS(on) = 0.35
MAX. @VGS = 10 V, ID = 1.0 A
Document No. D11226EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
100
V
Gate to Source Voltage
VGSS
VDS = 0
±20
V
Drain Current (DC)
ID(DC)
±2.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms,
±4.0
A
Duty cycle
≤ 50 %
Total Power Dissipation
PT
7.5 cm2
× 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
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| 2SK2055-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) MP-2 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,2.0A,0.28ohm,MP-2 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) MP-2 T/R |
| 2SK2057 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field Effect Transistor Silicon N Channel MOS Type |
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| 2SK2059 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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