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參數(shù)資料
| 型號(hào)： | 2SK2084L-E |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 20 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2SK2084L-E |
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
40
30
20
10
0
50
100
150
200
50
30
10
3
1
0.3
0.1
0.3
1
3
10
30
1 ms
Operation in
this area is
limited by RDS(on)
Ta = 25
°C
DC
Operation
(Tc
=
25
°C)
100
s
10
s
PW
=
10
m
s (1shot)
20
16
12
8
4
0
24
6
8
10
VGS = 2.5 V
3.5 V
10 V
6 V
4 V
3 V
Pulse Test
20
16
12
8
4
01
2
3
4
5
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
0.5
0.4
0.3
0.2
0.1
02
4
6
8
10
Pulse Test
2 A
1 A
ID = 5 A
0.2
0.1
0.02
0.05
0.01
0.1 0.2
0.5
1
2
5
10
20
10 V
VGS = 4 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2084S | 制造商:Hitachi 功能描述: |
| 2SK2084STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2085 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2085(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2089 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-251VAR |
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