參數(shù)資料
型號(hào): 2SK2139
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁數(shù): 3/8頁
文件大小: 111K
代理商: 2SK2139
2SK2139
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
T
C
- Case Temperature - C
d
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
V
DS
- Drain to Source Voltage - V
I
D
10
5
10
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
10
V
GS
- Gate to Source Voltage - V
I
D
5
0
1
0
6 V
10 V
8 V
V
GS
= 20 V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
60
T
C
- Case Temperature - C
P
T
0
40
20
60
40
80
100
120
80
T
C
= 25 C
Single Pulse
1ms
100ms
Powe DsspaionLmted
I
D (pulse)
PW=10 s
μ
R
DS(on
Lmted(a V
GS
=20V
Pulsed
50
10
1.0
T
ch
= 125 C
75 C
25 C
–25 C
V
DS
= 10 V
Pulsed
I
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