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參數(shù)資料
| 型號(hào)： | 2SK213 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK213 |
2SK213, 2SK214, 2SK215, 2SK216
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK213
V
DSX
140
V
2SK214
160
2SK215
180
2SK216
200
Gate to source voltage
V
GSS
I
D
I
DR
Pch
±
15
V
Drain current
500
mA
Body to drain diode reverse drain current
500
mA
Channel dissipation
1.75
W
Pch*
1
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–45 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK213
V
(BR)DSX
140
—
—
V
I
D
= 1 mA, V
GS
= –2 V
breakdown voltage
2SK214
160
—
—
V
2SK215
180
—
—
V
2SK216
200
—
—
V
Gate to source breakdown
voltag
V
(BR)GSS
±
15
—
—
V
I
G
=
±
10
μ
A, V
DS
= 0
Gate to source voltage
V
GS(on)
V
DS(sat)
0.2
—
1.5
V
I
D
= 10 mA, V
DS
= 10 V *
1
I
D
= 10 mA, V
GD
= 0 *
1
Drain to source saturation
voltage
—
—
2.0
V
Forward transfer admittance
|y
fs
|
Ciss
20
40
—
mS
I
D
= 10 mA, V
DS
= 20 V *
1
I
D
= 10 mA, V
DS
= 10 V,
f = 1 MHz
Input capacitance
—
90
—
pF
Reverse transfer capacitance
Note:
1. Pulse test
Crss
—
2.2
—
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK214 | Silicon N-Channel MOS FET |
| 2SK215 | Silicon N-Channel MOS FET |
| 2SK216 | Silicon N-Channel MOS FET |
| 2SK2141 | Switching N-channel power MOS FET industrial use |
| 2SK2144 | Silicon N-Channel MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK213(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2130 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2131 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2131-AZ | 制造商:Renesas Electronics 功能描述:Nch 150V 15A 120m@10V IsolatedTO220 Bulk |
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