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參數(shù)資料
| 型號： | 2SK2166-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 40 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 176K |
| 代理商： | 2SK2166-01R |
2SK2166-01R
N-channel MOS-FET
FAP-IIIA Series
60V
0,03
40A
80W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
-
Avalanche Proof
-
Including G-S Zener-Diode
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC Converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
60
60
40
160
±20
80
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=60V
V
GS
=0V
V
GS
=±16V
I
D
=20A
I
D
=20A
I
D
=20A
Min.
Typ.
Max.
Unit
V
V
μA
mA
μA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=40A
V
GS
=10V
R
GS
=25
60
1,0
1,5
2,0
500
1,0
10
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
0,030
0,20
0,050
0,030
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
I
DR
I
DRM
V
SD
t
rr
Q
rr
13
25
1600
580
320
15
90
300
190
2400
870
480
23
140
450
290
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L=100μH T
ch
=25°C
40
40
160
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
1,4
80
0,17
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
30
1,56
Unit
°C/W
°C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
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