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參數(shù)資料
| 型號(hào)： | 2SK2167 |
| 元件分類： | JFETs |
| 英文描述： | 0.4 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SK2167 |
2SK2167
No.4631-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
250
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
400
mA
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
1.6
A
Allowable Power Dissipation
PD
Tc=25
°C
3.5
W
Mounted on a ceramic board (600mm2!0.8mm)
1.3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
250
V
Zero-Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±18V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=200mA
270
400
mS
Static Drain-to-Source On-State Resistance
RDS(on)
ID=200mA, VGS=10V
8
12
Input Capacitance
Ciss
VDS=20V, f=1MHz
37
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
10
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
4
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
10
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
35
ns
Fall Time
tf
See specified Test Circuit.
45
ns
Diode Forward Voltage
VSD
IS=400mA, VGS=0V
1.0
V
Marking : KK
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN4631A
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
81006PA MS IM TC-00000124 / 71599 TH (KT) / 51794 TH (KOTO) BX-0113
SANYO Semiconductors
DATA SHEET
2SK2167
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2167-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH250V0.4ASOT89 |
| 2SK2168 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SK2169 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SK2169-AZ | 制造商:SANYO 功能描述:MOSFET,N CH,250V,0.4A,SC-71 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH250V0.4ASC-71 |
| 2SK216-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 200V 0.5A 3PIN TO-220AB - Rail/Tube |
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