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參數(shù)資料
| 型號(hào)： | 2SK2205 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | 2SK2205 |
2SK2205
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 25 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A
V
GS
= 10 V*
I
D
= 25 A
V
GS
= 4 V*
I
D
= 25 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
1.0
—
2.5
Static drain to source on state
resistance
—
0.011
0.015
1
—
0.016
0.022
1
Forward transfer admittance
|y
fs
|
23
38
—
S
1
Input capacitance
Ciss
—
3600
—
pF
Output capacitance
Coss
—
2000
—
pF
Reverse transfer capacitance
Crss
—
400
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D
= 25 A
V
GS
= 10 V
R
L
= 1.2
Rise time
t
r
t
d(off)
t
f
V
DF
—
230
—
ns
Turn-off delay time
—
435
—
ns
Fall time
—
360
—
ns
Body to drain diode forward
voltage
—
1.1
—
V
I
F
= 45 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
75
—
ns
I
= 45 A, V
= 0,
diF / dt = 50 A /
μ
s
See characteristic curve of 2SK2204.
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