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參數(shù)資料
| 型號(hào)： | 2SK2216 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK2216 |
2SK2216
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
Pch*
1
60
V
Gate to source voltage
±10
V
Drain current
20
A
Channel dissipation
150
W
Channel temperature
Tch
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(T
C
= 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain leakage current*
1
I
DSS
I
GSS
V
GS(off)
V
DS(on)
|y
fs
|
Ciss
—
—
1
mA
V
DS
= 60 V, V
GS
= 0
V
GS
= ± 10 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 5 A*
2
V
DS
= 10 V, I
D
= 5 A*
2
V
= 5 V, V
DS
= 0
f = 1MHz
Gate leakage current*
1
—
—
± 3
μA
Gate to source cutoff voltage*
1
0.3
—
1.6
V
Drain to source voltage*
1
—
1.2
2.5
V
Forward transfer admittance*
1
3.0
4.0
—
S
Input capacitance*
1
—
250
—
pF
Output capacitance*
1
Coss
—
85
—
pF
V
= 10V, V
GS
= 0
f = 1MHz
Output power
P
OUT
η
D
100
140
—
W
V
DS
= 28 V, I
DO
= 0.4 A
f = 860 MHz, Pin = 15 W
Drain efficiency
Notes: 1. Shows / unit FET
2. Pulse Test
—
55
—
%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amp Applications |
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| 2SK2218-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR|JFET|N-CHANNEL|57MA I(DSS)|SOT-89 |
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