參數(shù)資料
型號(hào): 2SK2219
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Junction FET for Capacitor Microphone Applications(應(yīng)用于電容器話筒的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)晶體管的結(jié)電容麥克風(fēng)應(yīng)用(應(yīng)用于電容器話筒的?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 134K
代理商: 2SK2219
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK2219
Capacitor Microphone Applications
Ordering number:ENN4755
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/63094MT (KOTO) BX-0346 No.4755–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2058A
[2SK2219]
Features
· Ultrasmall-sized package permitting 2SK2219-
applied sets to be made small and slim.
· Especially suited for use in audio, telephone capaci-
tor microphones.
· Excellent voltage characteristic.
· Excellent transient characteristic.
· Adoption of FBET process.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
* : The 2SK2219 is classified by I
DSS
as follows : (unit :
μ
A)
Continued on next page.
Marking : D
I
DSS
rank : 21, 22, 23
0.3
0.650.65
2.0
0
1
2
0
0.15
0 to 0.1
0
0.3
0.6
0.9
3
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
n
D
t
e
C
e
C
e
a
T
n
o
n
e
g
a
S
-
G
e
G
n
D
w
o
u
J
V
O
D
G
IG
ID
PD
j
g
T
0
0
1
0
0
0
2
1
V
A
A
W
m
m
m
t
o
P
m
e
m
e
n
o
p
s
D
e
p
e
p
r
w
0
5
5
1
1
1
T
+
o
5
5
0
4
2
1
2
0
4
1
0
5
3
2
2
0
1
2
0
0
5
3
2
0
2
3
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
4
1
2
5
m
p
x
a
m
e
g
a
V
e
C
n
w
o
d
n
D
k
a
e
e
B
n
D
V
e
G
a
V
T
d
w
a
C
t
p
e
s
v
e
-
G
-
Z
f
C
r
F
n
R
V
O
D
G
S
S
)
S
s
s
s
C
s
C
)
R
D
G
|
B
I
(
IG
VS
D
VS
D
VS
D
VS
D
VS
D
A
V
μ
,
I
V
,
V
5
V
5
=
V
5
=
0
V
0
5
5
1
=
=
=
=
0
*
2
0
V
μA
V
m
p
p
t
g
a
e
g
r
n
a
a
a
r
n
a
T
S
1
G
D
V
G
V
G
V
G
0
A
=
=
=
=
=
=
=
μ
*
0
0
2
5
V
=
6
2
1
8
e
c
n
a
m
d
A
|
S
S
S
z
H
H
M
M
1
k
1
1
S
F
F
e
c
n
p
,
,
z
z
e
c
n
a
a
p
a
C
s
H
8
相關(guān)PDF資料
PDF描述
2SK2220 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2221 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2225 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2247 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2329L Silicon N-Channel MOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK221H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3
2SK222 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency, Low-Noise Amp Applications
2SK2220 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 180V 8A 3PIN TO-3P - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P
2SK2220-E 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 180V 8A 3PIN TO-3P - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 180V 8A 3-Pin(3+Tab) TO-3P Tube Tray 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 180V 8A 3-Pin(3+Tab) TO-3P Tube