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參數(shù)資料
| 型號： | 2SK222 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | NP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SK222 |
2SK222
No.836-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Semiconductors
DATA SHEET
22807GB TI IM / 42099TH (KT) / 90895MO (KOTO) / 6027KI / 2075MW 8-3836
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SK222
N-Channel Junction Silicon FET
Low-Frequency,
Low Noise Amplifier Applications
Features
Ultralow noise figure.
Large yfs.
Low gate leakage current.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
40
V
Gate-to-Drain Voltage
VGDS
--40
V
Gate Current
IG
10
mA
Allowable Power Dissipation
PD
300
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
--40 to +125
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--100A
-40
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V
--1.0
nA
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0V
0.6*
12.0*
mA
Cutoff Voltage
VGS(off)
VDS=10V, ID=10A
0.5
V
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
17
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
14
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
3.5
pF
Continued on next page.
* : The 2SK222 is classified by IDSS as follows : (unit : mA).
Rank
C
D
E
F
hFE
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
5.0 to 12.0
Ordering number : EN836H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK222D | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK2329(S) | 0.06 ohm, POWER, FET |
| 2SK2329(L) | 0.06 ohm, POWER, FET |
| 2SK2329(L) | 0.06 ohm, POWER, FET |
| 2SK2329L-E | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2220 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 180V 8A 3PIN TO-3P - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P |
| 2SK2220-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 180V 8A 3PIN TO-3P - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 180V 8A 3-Pin(3+Tab) TO-3P Tube Tray 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 180V 8A 3-Pin(3+Tab) TO-3P Tube |
| 2SK2221 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 200V 8A 3PIN TO-3P - Rail/Tube |
| 2SK2221-E | 功能描述:MOSFET N-CH 200V 8A TO-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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