參數(shù)資料
型號: 2SK2316
元件分類: JFETs
英文描述: 2 A, 20 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PCP, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 136K
代理商: 2SK2316
2SK2316
Ordering number : EN5300A
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0121 No.5300-1/4
Package Dimensions
unit: mm
2062A-PCP
[2SK2316]
SANYO: PCP
(Bottom View)
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
2A
Drain Current (Pulse)
IDP
PW≤10d, duty cycle≤1%
8
A
Allowable Power Dissipation
PD
Mounted on ceramic board
1.5
W
(250mm
2×0.8mm)
Tc=25°C
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
D-S Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
G-S Breakdown Voltage
V(BR)GSS
IG=±100A, VDS=0
±10
V
Zero-Gate Voltage
IDSS
VDS=16V, VGS=0
100
A
Drain Current
Gate-to-Source Leakage Current IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.8
2.8
S
Static Drain-to-Source
RDS(on)
ID=1A, VGS=4V
140
200
m
ON-State Resistance
RDS(on)
ID=1A, VGS=2.5V
200
320
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
170
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
145
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
50
pF
Continued on next page.
Features
Low ON resistance.
Ultrahigh-speed switching.
Low-voltage drive (2.5V drive).
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