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參數(shù)資料
| 型號： | 2SK2328-E |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 2SK2328-E |
2SD2651
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
150
100
50
Ambient Temperature Ta (
°C)
0
1.5
0.5
1.0
Maximum Collector Dissipation Curve
Collector
Dissipation
P
C
(W)
Typical Output Characteristics
Collector
Current
I
C
(mA)
0
20406080
100
Collector to emitter voltage VCE (V)
10
8
6
4
2
Pulse Test
IB = 10 A
20
A
30
A
40
A
50
A
80
A
100
A
60
A
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
100
10
1.0
0.1
0.01
VCE = 6 V
Pulse Test
-25
°C
25
°C
Ta = 75
°C
1.0
0.8
0.6
0.4
0.2
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
0.1
1.0
10
100
1
10
100
1,000
DC
Current
Transfer
Ratio
h
FE
VCE = 6 V
Pulse Test
–25
°C
25
°C
Ta = 75
°C
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
Collector
to
Emitter
saturation
Voltage
V
CE
(sat)
(V)
0.1
1.0
10
100
0.01
0.1
1.0
10
IC/IB = 10
Pulse Test
–25
°C
25
°C
Ta = 75
°C
Gain Bandwidh Product vs.
Collector Current
Collector Current IC (mA)
0.1
1.0
10
100
1
10
100
1,000
Gain
Bandwidh
Product
f
T
(MHz)
VCE = 6 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2343TR | 6 A, 20 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SJ421TL | 5 A, 30 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK2556TL | 6 A, 30 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SJ420TL | 5 A, 12 V, 0.108 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK2354 | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2329 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2329-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2329L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2329-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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