參數(shù)資料
型號: 2SK2341
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 97K
代理商: 2SK2341
MOS FIELD EFFECT TRANSISTOR
2SK2341
DESCRIPTION
The 2SK2341 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
R
DS(on)
= 0.26
MAX. (V
GS
= 10 V, I
D
= 6.0 A)
L
OW
C
iss
C
iss
= 1090 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
C
= 25
°
C) P
T1
Total Power Dissipation (T
a
= 25
°
C) P
T2
Storage Temperature
Channel Temperature
Single Avalanche Current
Single Avalanche Energy
*PW
10
μ
s, Duty Cycle
1 %
**Starting T
ch
= 25
°
C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
*
250
±
30
±
11
±
44
35
2.0
V
V
A
A
W
W
°
C
°
C
A
mJ
T
stg
T
ch
I
AS
**
E
AS
**
–55 to +150
150
11
320
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
(O.D. No.
Date Published
Printed in J apan
TC-2511
TC–8070)
J anuary 1995 P
10.0 ± 0.3
φ
3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
1.3 ± 0.2
2.54 TYP.
0.7 ± 0.1
4
1
1
3
1
2 3
1. Gate
2. Drain
3. Source
1
MP-45F(SIOLATED TO-220)
Body diode
Source (S)
Drain (D)
Gate (G)
1
2 3
PACKAGE DIMENSIONS
(in millimeters)
1995
DATA SHEET
相關PDF資料
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