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參數(shù)資料
| 型號： | 2SK2361-A |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-88, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 2SK2361-A |
2SK2361/2SK2362
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Qg - Gate Charge - nC
V
DS
-Drain
to
Source
Voltage
-
V
0
10203040
400
300
200
100
Tch - Channel Temperature -C
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
–50
0
50
100
150
1.6
1.2
0.8
0.4
0
VGS = 10 V
ID = 6 A
3 A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
ID - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
1 000
0.1
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
16
14
12
10
8
6
4
2
ID = 10 A
VDD = 400 V
250 V
125 V
VGS
VDS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
1.5
100
10
1.0
0.1
1.0
0.5
0
Pulsed
10 V
VGS = 0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
100
1 000
10 000
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
1 000
100
10
1
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1.0
10
100
1 000
ID - Drain Current - A
td
(on)
,t
r,
t
d
(off)
,t
f-
Switching
Time
-
ns
100
0.1
10
1.0
VDS = 150 V
VGS = 10 V
RG = 10
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
di/dt = 50 A/us
VGS = 0
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2361 | 10 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2362-A | 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2361-A | 10 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2362-A | 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2362 | 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2362 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2362K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2363 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2363(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2364 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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