參數(shù)資料
型號: 2SK2413
元件分類: JFETs
英文描述: 10 A, 60 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-10, ISOLATED TO-220, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 121K
代理商: 2SK2413
2SK2413
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS(on)1
50
70
VGS = 10 V, ID = 5.0 A
Drain to Source On-Resistance
RDS(on)2
70
95
VGS = 4 V, ID = 5.0 A
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.6
2.0
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
7.0
12
VDS = 10 V, ID = 5.0 A
Drain Leakage Current
IDSS
±10
VDS = 60 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
VGS =
±20 V, VDS = 0
Input Capacitance
Ciss
860
VDS = 10 V
Output Capacitance
Coss
440
VGS = 0
Reverse Transfer Capacitance
Crss
110
f = 1 MHz
Turn-On Delay Time
td(on)
15
ID = 5.0 A
Rise Time
tr
90
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
75
VDD = 30 V
Fall Time
tf
30
RG = 10
Total Gate Charge
QG
24
ID = 20 A
Gate to Source Charge
QGS
3.0
VDD = 48 V
Gate to Drain Charge
QGD
6.0
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.0
IF = 10 A, VGS = 0
Reverse Recovery Time
trr
95
IF = 10 A, VGS = 0
Reverse Recovery Charge
Qrr
250
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
RG = 25
50
PG
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
RG = 10
D.U.T.
PG.
0
t
RL
VDD
VGS
t = 1 s
Duty Cycle
≤ 1 %
ID
0
10 %
90 %
10 %
90 %
ID
VGS (on)
td (off)
td (on)
ton
toff
tf
tr
Test Circuit 3 Gate Charge
D.U.T.
RL
VDD
50
IG = 2 mA
PG.
VDD
VGS
RG
D.U.T.
VGS
Wave
Form
ID
Wave
Form
UNIT
m
m
V
S
A
pF
ns
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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2SK2413-AZ 10 A, 60 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET
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