參數(shù)資料
型號(hào): 2SK2418S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 60K
代理商: 2SK2418S
2SK2418(L), 2SK2418(S)
6
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
di/dt = 20 A/
μ
s
V = 0, Ta = 25
°
C
0
10
20
30
40
50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
50
40
30
20
10
0
Gate Charge Qg (nc)
D
D
20
16
12
8
4
0
G
G
Dynamic Input Characteristics
V
GS
DS
V
I = 7 A
V = 15 V
10 V
5 V
20
40
60
80
100
V = 5 V
10 V
15 V
Drain Current I (A)
S
Switching Characteristics
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
tf
r
d(on)
t
d(off)
t
V = 4 V, V = 10 V
PW = 5 μs, duty < 1 %
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