參數(shù)資料
型號(hào): 2SK2462
廠商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 114K
代理商: 2SK2462
MOS FIELD EFFECT TRANSISTOR
2SK2462
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 0.14
MAX. (@ V
GS
= 10 V, I
D
= 8.0 A)
R
DS(on)2
= 0.17
MAX. (@ V
GS
= 4 V, I
D
= 8.0 A)
Low C
iss
C
iss
= 790 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
10
μ
s, Duty Cycle
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
100
±
20
±
15
±
60
30
2.0
150
V
V
A
A
W
W
C
C
A
mJ
T
ch
T
stg
I
AS
E
AS
–55 to +150
15
22.5
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
1995
DATA SHEET
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
1
3
1
1
M
4
1.3 ±0.2
1.5 ±0.2
2.54
2.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
1
2 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
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