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參數(shù)資料
| 型號： | 2SK2462 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 212K |
| 代理商： | 2SK2462 |
2SK2462
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS(on)1
0.10
0.14
VGS = 10 V, ID = 8.0 A
Drain to Source On-Resistance
RDS(on)2
0.12
0.17
VGS = 4 V, ID = 8.0 A
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.6
2.0
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
7.0
14
VDS = 10 V, ID = 8.0 A
Drain Leakage Current
IDSS
10
VDS = 100 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
VGS =
±20 V, VDS = 0
Input Capacitance
Ciss
790
VDS = 10 V
Output Capacitance
Coss
280
VGS = 0
Reverse Transfer Capacitance
Crss
88
f = 1 MHz
Turn-On Delay Time
td(on)
16
ID = 8.0 A
Rise Time
tr
110
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
88
VDD = 50 V
Fall Time
tf
62
RG = 10
Total Gate Charge
QG
33
ID = 15 A
Gate to Source Charge
QGS
5.4
VDD = 80 V
Gate to Drain Charge
QGD
25
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.1
IF = 15 A, VGS = 0
Reverse Recovery Time
trr
160
IF = 15 A, VGS = 0
Reverse Recovery Charge
Qrr
670
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
RG = 25
50
PG
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
RG = 10
D.U.T.
PG.
0
t
RL
VDD
VGS
t = 1 s
Duty Cycle
≤ 1 %
ID
0
10 %
90 %
10 %
90 %
ID
VGS (on)
td (off)
td (on)
ton
toff
tf
tr
Test Circuit 3 Gate Charge
D.U.T.
RL
VDD
50
IG = 2 mA
PG.
VDD
VGS
RG
D.U.T.
VGS
Wave
Form
ID
Wave
Form
UNIT
V
S
A
pF
ns
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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| 2SK2462-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 Bulk |
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