參數(shù)資料
型號(hào): 2SK2479
廠商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 118K
代理商: 2SK2479
2SK2479
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
I
D
- Drain Current - A
R
D
0.1
100
0.01
0.1
1.0
10
1 000
10 000
1 m
10 m
100 m
1
10
100
1 000
10
μ
μ
100
V
= 20 V
Pulsed
1
0.1
0.1
1.0
10
1.0
10
5
20
30
Pulsed
1.0
10
0
5
V
DS
= 10 V
I
D
= 1 mA
–50
0
50
100
150
0
1
Single Pulse
T
c
= 25 C
10
Rt
h(ch-a)
= 83.3(C/W)
Rt
h(ch-c)
= 1.79(C/W)
I
D
= 3 A
1.5 A
0.6 A
T
A
= –25 C
25 C
75 C
125 C
5
10
Pulsed
V
GS
= 10 V
15
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