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參數(shù)資料
| 型號： | 2SK2514 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK2514 |
MOS FIELD EFFECT TRANSISTOR
2SK2514
DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super Low On-Resistance
R
DS (on)1
≤
15 m
(V
GS
= 10 V, I
D
= 25 A)
R
DS (on)2
≤
23 m
(V
GS
= 4 V, I
D
= 25 A)
Low C
iss
C
iss
= 2 100 pF TYP.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
*
PW
≤
10
μ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
60
±
20
±
50
±
200
150
3.0
150
V
V
A
A
W
W
C
–55 to +150 C
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10296EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
5.45
4.7 MAX.
1.5
1
6
7
1
2
3
4
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
1995
DATA SHEET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2514-A | 制造商:Renesas Electronics 功能描述:Nch 60V 50A 15m@10V TO3P 制造商:Renesas Electronics 功能描述:Nch 60V 50A 15m@10V TO3P Bulk |
| 2SK2515 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2515-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-3P |
| 2SK2516-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2516-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
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