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參數(shù)資料
| 型號(hào)： | 2SK2544 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, 2-10P1B, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 417K |
| 代理商： | 2SK2544 |
2SK2544
2010-04-13
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2544
Switching Regulator Applications
Low drainsource ON-resistance
: RDS (ON) = 0.9 (typ.)
High forward transfer admittance
: |Yfs| = 5.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
600
V
Draingate voltage (RGS = 20 k)
VDGR
600
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
6
A
Drain current
Pulse (Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
345
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.56
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 , IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
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| 2SK2544 | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2551 | 50 A, 50 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2551 | 50 A, 50 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2552B | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2552C | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2544(F) | 功能描述:MOSFET MOSFET N-Ch 600V 6A Rdson=1.25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2544_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK2544_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK2545 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:FET Silicon N Channel Mos Type(for High speed, High Voltage Switching) |
| 2SK2545(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V, 6A, RDSON=1.25OHM - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220NIS |
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