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參數(shù)資料
| 型號： | 2SK2544 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, 2-10P1B, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 410K |
| 代理商： | 2SK2544 |
2SK2544
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VGS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VDS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
—
0.9
1.25
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
2.0
5.5
—
S
Input capacitance
Ciss
—
1300
—
Reverse transfer capacitance
Crss
—
130
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
400
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
45
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
—
150
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
30
—
Gatesource charge
Qgs
—
18
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
—
12
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
6
A
Pulse drain reverse current
(Note 1)
IDRP
—
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
7
—
μC
Marking
Lot No.
Note 4
K2544
Part No.
(or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2544(F) | 功能描述:MOSFET MOSFET N-Ch 600V 6A Rdson=1.25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2544_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK2544_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK2545 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:FET Silicon N Channel Mos Type(for High speed, High Voltage Switching) |
| 2SK2545(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V, 6A, RDSON=1.25OHM - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220NIS |
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