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參數(shù)資料
| 型號(hào)： | 2SK2552B |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | USM, SC-75, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | 2SK2552B |
Data Sheet D17282EJ1V0DS
3
2SK2552B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT
-
D
erating
F
a
ctor
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
I
D
-
Dr
ain
Cur
rent
-
A
0
200
400
600
800
1000
0
2468
10
0 V
0.2 V
0.3 V
0.1 V
VGS = 0.2 V
0.1 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate
to
So
u
rce
Current
-
A
0
10
20
30
40
10
20
30
40
0.2 0.4 0.6 0.8
0.2
0.4
0.6
0.8
VGS - Gate to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VDS = 2.0 V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s-
Input
C
apa
citance
-
pF
1
10
110
100
VGS = 0 V
f = 1.0 MHz
VDS - Drain to Source Voltage - V
|y
fs
|-
Forward
T
ransfer
Admittan
ce
-
mS
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0.1
1
10
100
1000
| yfs |
VGS(off)
VDS = 2.0 V
IDSS - Zero Gate Voltage Drain Current -
A
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|---|---|
| 2SK2552C | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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| 2SK2552J6-T1 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2552B(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2552C | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:JUNCTION FIELD EFFECT TRANSISTOR |
| 2SK2553 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
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