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參數(shù)資料
| 型號： | 2SK2552C-EH |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | USM, SC-75, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 128K |
| 代理商： | 2SK2552C-EH |
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JUNCTION FIELD EFFECT TRANSISTOR
2SK2552C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D18893EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK2552C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK2552C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
Low noise:
108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
Containing a diode and high resistivity, short stability time is
achieved during power-on.
Small package: SC-75 (USM)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2552C
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS =
1.0 V)
VDSX
20
V
Gate to Drain Voltage
VGDO
20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.6
TYP.
0 to 0.1
1.6
±0.1
0.8
±0.1
0.5
TYP.
0.5
TYP.
1.0 TYP.
1.6 ±0.1
0.75 ±0.05
0.3
+0.1
–0
0.15
+0.1
–0.05
0.2
+0.1
–0
1
2
3
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
| 2SK2553(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263VAR |
| 2SK2553L | 制造商:Renesas Electronics Corporation 功能描述: |
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