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參數(shù)資料
| 型號： | 2SK2553STL-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK2553STL-E |
2SK2553(L), 2SK2553(S)
Rev.10.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
Drain peak current
ID(pulse)
Note 1
200
A
Body to drain diode reverse drain current
IDR
50
A
Avalanche current
IAP
Note 3
45
A
Avalanche energy
EAR
Note 3
174
mJ
Channel dissipation
Pch
Note 2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
V
ID = 1 mA, VDS = 10 V
—
7
10
m
ID = 25 A, VGS = 10 V
Note 4
Static drain to source on state
resistance
RDS(on)
—
10
16
m
ID = 25 A, VGS = 4 V
Note 4
Forward transfer admittance
|yfs|
35
55
—
S
ID = 25 A, VDS = 10 V
Note 4
Input capacitance
Ciss
—
3550
—
pF
Output capacitance
Coss
—
1760
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
35
—
ns
Rise time
tr
—
230
—
ns
Turn-off delay time
td(off)
—
470
—
ns
Fall time
tf
—
360
—
ns
ID = 25 A, VGS = 10 V,
RL = 1.2
Body to drain diode forward voltage
VDF
—
0.85
—
V
IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
135
—
ns
IF = 50 A, VGS = 0
diF / dt = 50 A /
s
Note:
4. Pulse Test
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