參數(shù)資料
型號: 2SK2554-E
元件分類: JFETs
英文描述: 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 103K
代理商: 2SK2554-E
1998
Document No. D16160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1A4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 10 k
)
Complementary transistor with AN1A4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
135
340
600
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
100
300
Collector saturation voltage
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.04
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.55
0.5
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
2.0
0.8
V
Input resistance
R1
7.0
10
13.0
k
Turn-on time
ton
0.2
s
Storage time
tstg
5.0
s
Turn-off time
toff
VCC = 5.0 V, RL = 1.0 k
VI = 5.0 V, PW = 2.0
s
duty cycle
≤2 %
6.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
Q
P
K
hFE1
135 to 270
200 to 400
300 to 600
相關(guān)PDF資料
PDF描述
2SK2554 0.01 ohm, POWER, FET
2SK2554 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2555TP-FA 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2557 7 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2442 7 A, 30 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2555 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK2556 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK2557 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK2559 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(200V 10A)
2SK2559-7100 制造商:Shindengen Electric Mfg 功能描述:Cut Tape