參數(shù)資料
型號: 2SK2570
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET Low Frequency Power Switching
中文描述: 硅N溝道場效應(yīng)晶體管低頻功率開關(guān)
文件頁數(shù): 2/8頁
文件大?。?/td> 40K
代理商: 2SK2570
2SK2570
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch
20
V
Gate to source voltage
±
10
V
Drain current
0.2
A
Drain peak current
0.4
A
Channel dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
20
V
I
D
= 10
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
1.0
μ
A
V
DS
= 20 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
R
DS(on)
±
5.0
μ
A
V
GS
=
±
6.5V, V
DS
= 0
I
D
= 10
μ
A, V
DS
= 5V
I
D
= 100 mA
V
GS
= 4V
*
1
I
D
= 40 mA
V
GS
= 2.5V
*
1
I
D
= 100 mA
V
DS
= 10V
*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
0.5
1.5
V
Static drain to source on state
resistance
0.8
1.1
1.3
2.2
Forward transfer admittance
|y
fs
|
0.22
0.35
S
Input capacitance
Ciss
45
pF
Output capacitance
Coss
33
pF
Reverse transfer capacitance Crss
9.6
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
20
ns
V
GS
= 5V, I
D
= 100 mA
R
L
= 100
Rise time
60
ns
Turn-off delay time
240
ns
Fall time
Notes: 1. Pulse test
2. Marking is “ZL–”
140
ns
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