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參數(shù)資料
| 型號： | 2SK2586-E |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK2586-E |
2SK2586
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID*
2
60
A
Drain peak current
ID(pulse)*
1
240
A
Body to drain diode reverse drain current
IDR*
2
60
A
Avalanche current
IAP*
3
45
A
Avalanche energy
EAR*
3
174
mJ
Channel dissipation
Pch*
2
125
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
100
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
—
7
10
m
ID = 30 A, VGS = 10 V*
4
Static drain to source on state
resistance
RDS(on)
—
10
16
m
ID = 30 A, VGS = 4 V*
4
Forward transfer admittance
|yfs|
35
60
—
S
ID = 30 A, VDS = 10 V*
4
Input capacitance
Ciss
—
3550
—
pF
Output capacitance
Coss
—
1760
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
35
—
ns
Rise time
tr
—
260
—
ns
Turn-off delay time
td(off)
—
480
—
ns
Fall time
tf
—
370
—
ns
ID = 30 A, VGS = 10 V,
RL = 1.0
Body to drain diode forward voltage
VDF
—
0.94
—
V
IF = 60 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
140
—
ns
IF = 60 A, VGS = 0
diF / dt = 50 A /
s
Note:
4. Pulse Test
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|---|---|
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| 2SK2591 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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