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參數(shù)資料
| 型號(hào)： | 2SK2591 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 22K |
| 代理商： | 2SK2591 |
2SK2591
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
500
V
Gate to source voltage
±
30
8
V
Drain current
A
Drain peak current
1
32
A
Body to drain diode reverse drain current
8
A
Channel dissipation
2
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Symbol Min
Typ
—
—
—
—
—
0.45
Max
—
—
±
10
–250
–3.0
0.60
Unit
V
V
μ
A
μ
A
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V*
I
D
= 4 A
V
DS
= 10 V*
V
= 10 V V
GS
= 0
f = 1 MHz
500
±
30
—
—
2.0
—
I
GSS
I
DSS
V
GS(off)
R
DS(on)
1
|y
fs
|
5.0
7.5
—
S
1
Input capacitance
Ciss
—
1450
—
pF
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
—
—
—
410
55
20
—
—
—
pF
pF
ns
I
D
= 4 A
V
GS
= 10 V
R
L
= 5
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
r
t
d(off)
t
f
V
DF
—
—
—
—
55
130
50
0.9
—
—
—
—
ns
ns
ns
V
I
F
= 8 A, V
GS
= 0
t
rr
—
380
—
ns
I
= 8 A, V
= 0,
diF / dt = 100 A /
μ
s
See characteristics curves of 2SK1166.
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