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參數(shù)資料
| 型號(hào)： | 2SK2595AXTB-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | RP8P, 2 PIN |
| 文件頁(yè)數(shù)： | 12/16頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | 2SK2595AXTB-E |
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2SK2595
Rev.4.01 Jan 30, 2006 page 3 of 13
70
-10
-6
-2
2
6
10
50
60
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Input
Capacitance
Ciss
(pF)
VDS = 0
f = 1 MHz
Output Capacitance vs.
Drain to Source Voltage
Drain to Source VDS (V)
Output
Capacitance
Coss
(pF)
100
20
10
50
0.1 0.2
0.5
1
2
5
10 20
50
VGS = 0
f = 1 MHz
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage VDG (V)
10
2
1
5
0.1 0.2
0.5
1
2
5
10 20
50
VGS = 0
f = 1 MHz
Reverse
Transfer
Capacitance
Crss
(pF)
10
8
6
4
2
0
Output Power, Drain Efficiency
vs. Input Power
Output
Power
Po
(W)
Input power Pin (W)
Drain
Efficiency
η
D
(%)
100
80
60
40
20
0
1
0.8
0.6
0.4
0.2
VDS = 12 V
IDO = 500 mA
f = 836.5 MHz
Po
η
D
0.1
10
2
1
5
0.2
0.5
0.1
0.02
0.05
0.01
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current ID (A)
Drain
to
Source
Saturation
Voltage
V
DS(sat)
(V)
0.2
0.5
1
2
5
10
Tc = -25
°C
25
°C
75
°C
VGS = 10 V
Pulse Test
1.2
1.0
0.8
0.6
0.4
0.2
-25
Ambient Temperature Ta (
°C)
Gate
to
Source
Cutoff
Voltage
V
GS(off)
(V)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
0
25
50
75
100
125
1 mA
10 mA
I
D
= 0.1
mA
VDS = 12 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
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