參數(shù)資料
型號(hào)： 2SK2596
廠商： Renesas Technology Corp.
英文描述： Silicon N-Channel MOS FET UHF Power Amplifier
中文描述： 硅N溝道場(chǎng)效應(yīng)晶體管超高頻功率放大器
文件頁數(shù)： 2/5頁
文件大?。?/td> 68K
代理商： 2SK2596
2SK2596
Electrical Characteristics
Rev.3.00, Feb.14.2005, page 2 of 4
(Ta = 25°C)
Item
Symbol
I
DSS
I
GSS
V
GS(off)
Ciss
Coss
Pout
Min.
—
—
0.4
—
—
30.2
Typ
—
—
—
22
10.5
31.46
Max.
10
±5.0
1.1
—
—
—
Unit
μ
A
μ
A
V
pF
pF
dBm
Test Conditions
V
DS
= 12 V, V
GS
= 0
V
GS
= ±10 V, V
DS
= 0
I
D
= 2 mA, V
DS
= 12 V
V
GS
= 5 V, V
DS
= 0, f = 1 MHz
V
DS
= 12 V, V
GS
= 0, f = 1 MHz
V
DS
= 12 V, f = 836.5 MHz
Pin = 18 dBm
V
DS
= 12 V, Pout = 30.2 dBm
f = 836.5 MHz, Pin = 18 dBm
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Drain Efficiency
η
D
45
55
—
%
Main Characteristics
4
3
2
1
0
50
100
150
200
3.0
2.5
2.0
1.5
1.0
0.5
0
2
4
6
8
10
4 V
3 V
V
GS
= 2 V
5 V
Pulse test
6 V
8 V
10V
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
Tc = -25°C
25°C
75°C
0.01
1.0
0.2
0.5
0.1
0.02
0.05
0.01
0.02
0.05
0.1
0.2
0.5
1
Tc = -25°C
25°C
75°C
C
Case Temperature Tc (°C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
Drain Current I
D
(A)
F
Forward Transfer Admittance
vs. Drain Current
V
DS
= 12 V
Pulse Test
V
DS
= 12 V
Pulse Test
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PDF描述
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參數(shù)描述
2SK2596_07 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier
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