參數(shù)資料
型號： 2SK2596BXTL-E
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SC-62, UPAK-3
文件頁數(shù)： 1/10頁
文件大?。?/td> 232K
代理商： 2SK2596BXTL-E
REJ03G0207-0400 Rev.4.00 Nov 08, 2007
Page 1 of 9
2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0207-0400
Rev.4.00
Nov 08, 2007
Features
High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 1.05 W,
ηD = 45%min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1. Gate
2. Source
3. Drain
4. Source
3
1
2, 4
Note:
Marking is “BX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
0.4
A
Drain peak current
ID(pulse)
Note1
1
A
Channel dissipation
Pch
Note2
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
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