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參數(shù)資料
| 型號： | 2SK2597 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
| 中文描述： | ? -基站信道的功率MOSFET的為900兆赫波段功率放大的蜂窩電話 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 101K |
| 代理商： | 2SK2597 |
2SK2597
2
OUTPUT v.s. IM
3
, I
D
CHARACTERISTICS
–20
–30
–40
–50
–60
5
4
3
2
1
0
28
32
36
40
44
48
30
34
38
42
46
THIRD ORDER INTERMODULATION DISTORTION / DRAIN
CURRENT v.s. OUTPUT POWER
IM
3
(dBc)
I
D
(A)
P
OUT
(dBm)
(AVERAGE POWER)
Vds = 30 V
f1 = 900.0 MHz Idq = 200 mA
×
2
f2 = 900.1 MHz Idq = 500 mA
×
2
IM
3
I
D
INPUT v.s. OUTPUT, POWER GAIN, EFFICIENCY
(1) f = 960 MHz
1000
100
10
1
.1
100
10
12
20
28
36
44
52
16
24
32
40
48
f = 960 MHz
V
DD
= 30 V
I
DQ
= 200 mA
×
2
P
out
G
P
OUTPUT POWER / DRAIN EFFICIENCY /
POWER GAIN vs. INPUT POWER
P
in
(dBm)
P
o
G
P
η
η
D
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