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參數(shù)資料
| 型號： | 2SK2645 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N溝道場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 366K |
| 代理商： | 2SK2645 |
2SK2645-01MR
FAP-IIS Series
N-channel MOS-FET
1,2
600V
9A
50W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
≤
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
C
=25°C),
unless otherwise specified
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
600
9
32
±30
9
71,9
50
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=600V
V
GS
=0V
V
GS
=±30V
I
D
=4A
I
D
=4A
V
DS
=25V
Min.
600
3,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
4,0
10
0,2
10
1,0
4,5
500
1,0
100
1,2
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
2,5
5
900
150
70
25
70
60
35
1400
230
110
40
110
90
60
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=9A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
9
1,0
550
7,0
1,5
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
Unit
°C/W
2,5 °C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
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